An Independently Biased 3-stacked GaN HEMT Power Amplifier for Next-Generation Wireless Communication Systems
In this paper, a design of 3-stacked GaN highelectron-mobility transistor radio-frequency power amplifier employing an independently biased technique is presented to meet stringent requirements of next-generation wireless communication systems. The ability of independently adjusting operation condit...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Spolecnost pro radioelektronicke inzenyrstvi
2020-12-01
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| Series: | Radioengineering |
| Subjects: | |
| Online Access: | https://www.radioeng.cz/fulltexts/2020/20_04_0617_0624.pdf |