High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs
We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a unique...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2016-03-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-9292/5/1/12 |