Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was p...

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Bibliographic Details
Main Author: Sergej Alexandrovich Filonovich, Hugo Águas, Tito Busani, António Vicente, Andreia Araújo, Diana Gaspar, Marcia Vilarigues, Joaquim Leitão, Elvira Fortunato and Rodrigo Martins
Format: Article
Language:English
Published: Taylor & Francis Group 2012-01-01
Series:Science and Technology of Advanced Materials
Online Access:http://dx.doi.org/10.1088/1468-6996/13/4/045004

Internet

http://dx.doi.org/10.1088/1468-6996/13/4/045004

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