Improved Performance of InGaZnO Thin-Film Transistor With Ti Incorporation Into La<sub>2</sub>O<sub>3</sub> Gate Dielectric

Improved Performance of InGaZnO Thin-Film Transistor With Ti Incorporation Into La<sub>2</sub>O<sub>3</sub> Gate Dielectric

The effects of Ti incorporation in La<sub>2</sub>O<sub>3</sub> gate dielectric on the electrical characteristics of amorphous InGaZnO thin-film transistor are studied. Compared to the control sample with La<sub>2</sub>O<sub>3</sub> gate dielectric, the...

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Bibliographic Details
Main Authors: J. Q. Song, Y. Q. Yu, K. L. Zheng, Y. T. Su
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Amorphous InGaZnO (a-IGZO)
thin-film transistor (TFT)
La2O3
high-k dielectric
Ti incorporation
Online Access:https://ieeexplore.ieee.org/document/9536240/

Internet

https://ieeexplore.ieee.org/document/9536240/

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