High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

Hexagonal boron nitride (hBN) has attracted a great deal of attention as a key component in van der Waals (vdW) heterostructures, and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE) of hBN layers on substrates of...

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Bibliographic Details
Main Authors: Tin S. Cheng, Alex Summerfield, Christopher J. Mellor, Andrei N. Khlobystov, Laurence Eaves, C. Thomas Foxon, Peter H. Beton, Sergei V. Novikov
Format: Article
Language:English
Published: MDPI AG 2018-06-01
Series:Materials
Subjects:
UKNC
III-nitrides
nanostructures
MBE
hexagonal boron nitride
Online Access:http://www.mdpi.com/1996-1944/11/7/1119

Internet

http://www.mdpi.com/1996-1944/11/7/1119

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