Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Abstract GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from −4 to 4 V. Post-annealing results suggested that the capacitanc...

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Bibliographic Details
Main Authors: Meijuan Zheng, Guozhen Zhang, Xiao Wang, Jiaxian Wan, Hao Wu, Chang Liu
Format: Article
Language:English
Published: SpringerOpen 2017-04-01
Series:Nanoscale Research Letters
Subjects:
ZrO2
GaN
MOS
Atomic layer deposition
Post-annealing
Online Access:http://link.springer.com/article/10.1186/s11671-017-2024-x

Internet

http://link.springer.com/article/10.1186/s11671-017-2024-x

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