DIELECTRIC RELAXATION IN POR-SI LAYERS AT LOW FREQUENCIES
Macroporous silicon with a mesoporous nanostructured surface layer on its top was obtained by a method of electrochemical anodic etching. The frequency dependences of the dielectric coefficients for porous Si layers were measured in the frequency range 5∙10^(-3) < f < 10^6 Hz at a temperature...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Tver State University
2020-12-01
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| Series: | Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов |
| Subjects: | |
| Online Access: | https://physchemaspects.ru/2020/doi-10-26456-pcascnn-2020-12-170/ |