DIELECTRIC RELAXATION IN POR-SI LAYERS AT LOW FREQUENCIES
Macroporous silicon with a mesoporous nanostructured surface layer on its top was obtained by a method of electrochemical anodic etching. The frequency dependences of the dielectric coefficients for porous Si layers were measured in the frequency range 5∙10^(-3) < f < 10^6 Hz at a temperature...
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Tver State University
2020-12-01
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| Series: | Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов |
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| Online Access: | https://physchemaspects.ru/2020/doi-10-26456-pcascnn-2020-12-170/ |
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doaj-482e1232b08444f1acbd67ec2c2b779d2020-12-15T20:04:30ZrusTver State UniversityФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов2226-44422658-43602020-12-011217017910.26456/pcascnn/2020.12.170DIELECTRIC RELAXATION IN POR-SI LAYERS AT LOW FREQUENCIESYu.M. Spivak0R.A. Castro1M.P. Sevryugina2M.A. Kuznetsova3V.A. Moshnikov4Saint Petersburg Electrotechnical University «LETI», Saint Petersburg, RussiaHerzen State Pedagogical University of Russia, Saint Petersburg, RussiaJSC «Admiralty Shipyards», Saint Petersburg, RussiaSaint Petersburg Electrotechnical University «LETI», Saint Petersburg, RussiaSaint Petersburg Electrotechnical University «LETI», Saint Petersburg, RussiaMacroporous silicon with a mesoporous nanostructured surface layer on its top was obtained by a method of electrochemical anodic etching. The frequency dependences of the dielectric coefficients for porous Si layers were measured in the frequency range 5∙10^(-3) < f < 10^6 Hz at a temperature of 295 K and an applied voltage of 1 V. A maximum of the dielectric loss tangent is revealed, which is most likely due to the predominance of the dipole relaxation mechanism of polarization. The distribution of relaxers over relaxation times has been. An interpretation of the results obtained from the point of view of the structure of the porous layer is proposed.https://physchemaspects.ru/2020/doi-10-26456-pcascnn-2020-12-170/porous siliconnanostructured layerimpedanceinterfacedielectric relaxationlow-frequency dielectric spectroscopyion-electron microscopy |
| collection |
DOAJ |
| language |
Russian |
| format |
Article |
| sources |
DOAJ |
| author |
Yu.M. Spivak R.A. Castro M.P. Sevryugina M.A. Kuznetsova V.A. Moshnikov |
| spellingShingle |
Yu.M. Spivak R.A. Castro M.P. Sevryugina M.A. Kuznetsova V.A. Moshnikov DIELECTRIC RELAXATION IN POR-SI LAYERS AT LOW FREQUENCIES Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов porous silicon nanostructured layer impedance interface dielectric relaxation low-frequency dielectric spectroscopy ion-electron microscopy |
| author_facet |
Yu.M. Spivak R.A. Castro M.P. Sevryugina M.A. Kuznetsova V.A. Moshnikov |
| author_sort |
Yu.M. Spivak |
| title |
DIELECTRIC RELAXATION IN POR-SI LAYERS AT LOW FREQUENCIES |
| title_short |
DIELECTRIC RELAXATION IN POR-SI LAYERS AT LOW FREQUENCIES |
| title_full |
DIELECTRIC RELAXATION IN POR-SI LAYERS AT LOW FREQUENCIES |
| title_fullStr |
DIELECTRIC RELAXATION IN POR-SI LAYERS AT LOW FREQUENCIES |
| title_full_unstemmed |
DIELECTRIC RELAXATION IN POR-SI LAYERS AT LOW FREQUENCIES |
| title_sort |
dielectric relaxation in por-si layers at low frequencies |
| publisher |
Tver State University |
| series |
Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов |
| issn |
2226-4442 2658-4360 |
| publishDate |
2020-12-01 |
| description |
Macroporous silicon with a mesoporous nanostructured surface layer on its top was obtained by a method of electrochemical anodic etching. The frequency dependences of the dielectric coefficients for porous Si layers were measured in the frequency range 5∙10^(-3) < f < 10^6 Hz at a temperature of 295 K and an applied voltage of 1 V. A maximum of the dielectric loss tangent is revealed, which is most likely due to the predominance of the dipole relaxation mechanism of polarization. The distribution of relaxers over relaxation times has been. An interpretation of the results obtained from the point of view of the structure of the porous layer is proposed. |
| topic |
porous silicon nanostructured layer impedance interface dielectric relaxation low-frequency dielectric spectroscopy ion-electron microscopy |
| url |
https://physchemaspects.ru/2020/doi-10-26456-pcascnn-2020-12-170/ |
| work_keys_str_mv |
AT yumspivak dielectricrelaxationinporsilayersatlowfrequencies AT racastro dielectricrelaxationinporsilayersatlowfrequencies AT mpsevryugina dielectricrelaxationinporsilayersatlowfrequencies AT makuznetsova dielectricrelaxationinporsilayersatlowfrequencies AT vamoshnikov dielectricrelaxationinporsilayersatlowfrequencies |
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