S-TAT Leakage Current in Partial Isolation Type Saddle-FinFET (Pi-FinFET)s
In this paper, we compare conventional saddle type FinFETs to partial isolation type saddle FinFETs (Pi-FinFETs) using 3D TCAD simulations to examine the effect of single charge traps for proper prediction of leakage current. We simulated single charge traps at various locations in the drain region,...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
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Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9507492/ |