A Low Impact Ionization Rate Poly-Si TFT with a Current and Electric Field Split Design

A Low Impact Ionization Rate Poly-Si TFT with a Current and Electric Field Split Design

In this study, a novel low impact ionization rate (low-IIR) poly-Si thin film transistor featuring a current and electric field split (CES) structure with bottom field plate (BFP) and partial thicker channel raised source/drain (RSD) designs is proposed and demonstrated. The bottom field plate desig...

Full description

Bibliographic Details
Main Authors: Feng-Tso Chien, Kuang-Po Hsueh, Zhen-Jie Hong, Kuan-Ting Lin, Yao-Tsung Tsai, Hsien-Chin Chiu
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Coatings
Subjects:
polycrystalline silicon (poly-Si)
thin-film transistor (TFT)
current and electric field split (CES)
kink effect
field plate (FP)
raised source/drain (RSD)
Online Access:https://www.mdpi.com/2079-6412/9/8/514

Internet

https://www.mdpi.com/2079-6412/9/8/514

Similar Items