High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition
High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4953329 |