Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition
Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characteriz...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5118700 |