Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition

Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition

Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characteriz...

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Main Authors: Congyu Hu, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
Format: Article
Language:English
Published: AIP Publishing LLC 2019-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5118700
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spelling doaj-487e166cc7444101a00e9e2639fca8172020-11-24T21:56:53ZengAIP Publishing LLCAIP Advances2158-32262019-08-0198085022085022-410.1063/1.5118700081908ADVLow temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser depositionCongyu Hu0Fabi Zhang1Katsuhiko Saito2Tooru Tanaka3Qixin Guo4Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, JapanDepartment of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, JapanDepartment of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, JapanDepartment of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, JapanDepartment of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, JapanMonoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characterization from X-ray diffraction as well as Raman spectra analysis demonstrated the monoclinic structure of the films. β-Ga2O3 film deposited at 200 °C showed similar growth rate as well as optical bandgap values with films grown at higher temperatures from 300 to 500 °C, indicating the enhanced reaction between Ga and oxygen species during the deposition process with the assistant of plasma at low temperature. The low temperature growth of β-Ga2O3 film paves the way to be compatible with the established lithography of semiconductor microfabrication processes.http://dx.doi.org/10.1063/1.5118700
collection DOAJ
language English
format Article
sources DOAJ
author Congyu Hu
Fabi Zhang
Katsuhiko Saito
Tooru Tanaka
Qixin Guo
spellingShingle Congyu Hu
Fabi Zhang
Katsuhiko Saito
Tooru Tanaka
Qixin Guo
Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition
AIP Advances
author_facet Congyu Hu
Fabi Zhang
Katsuhiko Saito
Tooru Tanaka
Qixin Guo
author_sort Congyu Hu
title Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition
title_short Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition
title_full Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition
title_fullStr Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition
title_full_unstemmed Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition
title_sort low temperature growth of ga2o3 films on sapphire substrates by plasma assisted pulsed laser deposition
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-08-01
description Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characterization from X-ray diffraction as well as Raman spectra analysis demonstrated the monoclinic structure of the films. β-Ga2O3 film deposited at 200 °C showed similar growth rate as well as optical bandgap values with films grown at higher temperatures from 300 to 500 °C, indicating the enhanced reaction between Ga and oxygen species during the deposition process with the assistant of plasma at low temperature. The low temperature growth of β-Ga2O3 film paves the way to be compatible with the established lithography of semiconductor microfabrication processes.
url http://dx.doi.org/10.1063/1.5118700
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AT fabizhang lowtemperaturegrowthofga2o3filmsonsapphiresubstratesbyplasmaassistedpulsedlaserdeposition
AT katsuhikosaito lowtemperaturegrowthofga2o3filmsonsapphiresubstratesbyplasmaassistedpulsedlaserdeposition
AT toorutanaka lowtemperaturegrowthofga2o3filmsonsapphiresubstratesbyplasmaassistedpulsedlaserdeposition
AT qixinguo lowtemperaturegrowthofga2o3filmsonsapphiresubstratesbyplasmaassistedpulsedlaserdeposition
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