High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing

High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing

Abstract This paper investigates the impacts of post metal annealing (PMA) and post deposition annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ZrO2 dielectric. For the transistors without PDA, on-state current (I ON), subt...

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Bibliographic Details
Main Authors: Huan Liu, Genquan Han, Yan Liu, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2019-06-01
Series:Nanoscale Research Letters
Subjects:
Germanium
MOSFET
ZrO2
PMA
PDA
Mobility
Online Access:http://link.springer.com/article/10.1186/s11671-019-3037-4

Internet

http://link.springer.com/article/10.1186/s11671-019-3037-4

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