High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing
Abstract This paper investigates the impacts of post metal annealing (PMA) and post deposition annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ZrO2 dielectric. For the transistors without PDA, on-state current (I ON), subt...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2019-06-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-019-3037-4 |