The thermal stability of epitaxial GeSn layers
We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5036728 |