Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell
In this work, we propose and design a GaN-based diode with a p-doped GaN (p-GaN) multi-well structure for high efficiency betavoltaic (BV) cells. The short-circuit current density (JSC) and open-circuit voltage (VOC) of the devices were investigated with variations of parameters such as the doping c...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-04-01
|
| Series: | Nuclear Engineering and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1738573320308767 |