Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by l...

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Bibliographic Details
Main Authors: Siming Chen, Mingchu Tang, Jiang Wu, Qi Jiang, Vitaliy Dorogan, Mourad Benamara, Yuriy I. Mazur, Gregory J. Salamo, Huiyun Liu
Format: Article
Language:English
Published: MDPI AG 2015-06-01
Series:Photonics
Subjects:
quantum dot
semiconductor lasers
superluminescent light-emitting diodes
Si photonics
monolithic integration
Online Access:http://www.mdpi.com/2304-6732/2/2/646

Internet

http://www.mdpi.com/2304-6732/2/2/646

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