Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samp...

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Bibliographic Details
Main Authors: Gelczuk Łukasz, Dąbrowska-Szata Maria, Ściana Beata, Pucicki Damian, Radziewicz Damian, Kopalko Krzysztof, Tłaczała Marek
Format: Article
Language:English
Published: Sciendo 2016-12-01
Series:Materials Science-Poland
Subjects:
ganas
dilute nitrides
deep-level defects
dlts
ldlts
apmovpe
Online Access:https://doi.org/10.1515/msp-2016-0126

Internet

https://doi.org/10.1515/msp-2016-0126

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