Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate

Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate

GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n<sup>−</sup>-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect c...

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Bibliographic Details
Main Authors: Fangzhou Liang, Wen Chen, Meixin Feng, Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Qibao Wu, Hui Yang
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Photonics
Subjects:
GaN on Si
ultraviolet photodetector
Si doping
responsivity
persistent photoconductivity
Online Access:https://www.mdpi.com/2304-6732/8/2/28

Internet

https://www.mdpi.com/2304-6732/8/2/28

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