High-Performance Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Strained InAlGaAs Multiple Quantum Wells

High-Performance Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Strained InAlGaAs Multiple Quantum Wells

We demonstrate a high-performance Zn-diffusion 850-nm vertical-cavity surface-emitting laser (VCSEL). By the use of strained InAlGaAs/AlGaAs multiple quantum wells for the active region, our structure can have a much higher maximum output power, higher differential quantum efficiency (DQE), and larg...

Full description

Bibliographic Details
Main Authors: J.-W. Shi, W.-C. Weng, F.-M. Kuo, Ying-Jay Yang, S. Pinches, M. Geen, A. Joel
Format: Article
Language:English
Published: IEEE 2010-01-01
Series:IEEE Photonics Journal
Subjects:
Semiconductor laser
vertical-cavity surface-emitting laser (VCSEL)
Online Access:https://ieeexplore.ieee.org/document/5607273/

Internet

https://ieeexplore.ieee.org/document/5607273/

Similar Items