Counter-Doped Multizone Junction Termination Extension Structures in Vertical GaN Diodes
GaN is an attractive wide bandgap semiconductor for power applications, owing to its superior electrical properties, such as high critical electric field and saturation drift velocity. Recent advancements in developing native GaN substrates has drawn attention toward exploring vertical GaN power dio...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8636932/ |