Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors

Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors

In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in Ni<sub>2</sub>Si. These devices exploit the pinch-off surface effect. I-V and C-V ch...

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Bibliographic Details
Main Authors: G. Adamo, A. Tomasino, A. Parisi, D. Agro, S. Stivala, L. Curcio, A. Ando, R. Pernice, C. Giaconia, A. C. Busacca, M. C. Mazzillo, D. Sanfilippo, G. Fallica
Format: Article
Language:English
Published: IEEE 2014-01-01
Series:IEEE Photonics Journal
Online Access:https://ieeexplore.ieee.org/document/6887321/

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https://ieeexplore.ieee.org/document/6887321/

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