Gallium nitride high electron mobility transistor with an effective graphene-based heat removal system
The self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lead to the forming of a hot spot in the vicinity of...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2020-05-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/2671 |