Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm thick amorphous layer at the interface mitigates t...

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Bibliographic Details
Main Authors: S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco, D. Montero, L. Grenet, M. de la Mata, S. Fernández, L. Rodríguez-De Marcos, S. I. Molina, J. Olea, F. B. Naranjo
Format: Article
Language:English
Published: AIP Publishing LLC 2018-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5041924

Internet

http://dx.doi.org/10.1063/1.5041924

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