Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm thick amorphous layer at the interface mitigates t...
Main Authors: | , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-11-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5041924 |