MODELING OF MTJ AND ITS VALIDATION USING NANOSCALE MRAM BITCELL
Magnetic Tunnel Junction (MTJ) is a promising candidate for nonvolatile and low power memory design. MTJ is basic building block of STT-MRAM bitcell. We develop a Verilog-A based behavioral model of MTJ which effectively exhibits electrical characteristics of MTJ with a very low switching current (2...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor's University
2017-06-01
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| Series: | Journal of Engineering Science and Technology |
| Subjects: | |
| Online Access: | http://jestec.taylors.edu.my/Vol%2012%20issue%206%20June%202017/12_6_8.pdf |