Efficient and Optimized Methods for Alleviating the Impacts of IR-Drop and Fault in RRAM Based Neural Computing Systems

Resistive switching random access memory (RRAM) shows its potential to be a promising candidate as the basic in-memory computing unit for deep neural networks (DNN) accelerator design due to its non-volatile, low power, and small footprint properties. The RRAM based crossbar array (RRAM CBA) is usua...

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Bibliographic Details
Main Authors: Chenglong Huang, Nuo Xu, Keni Qiu, Yujie Zhu, Desheng Ma, Liang Fang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9466937/