Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote...

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Bibliographic Details
Main Authors: Jia Ge, Muzhi Tang, Johnson Wong, Zhenhao Zhang, Torsten Dippell, Manfred Doerr, Oliver Hohn, Marco Huber, Peter Wohlfart, Armin G. Aberle, Thomas Mueller
Format: Article
Language:English
Published: Hindawi Limited 2014-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2014/752967

Internet

http://dx.doi.org/10.1155/2014/752967

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