EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor. A comprehensive study of the Negative Capacitance Field...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IIUM Press, International Islamic University Malaysia
2020-01-01
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| Series: | International Islamic University Malaysia Engineering Journal |
| Subjects: | |
| Online Access: | https://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/1814 |