Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. Be...

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Bibliographic Details
Main Authors: Feng Sun, Chen Li, Chaochao Fu, Xiangbiao Zhou, Jun Luo, Wei Zou, Zhi-Jun Qiu, Dongping Wu
Format: Article
Language:English
Published: MDPI AG 2018-03-01
Series:Materials
Subjects:
Schottky barrier height
SB-MOSFET
dopant segregation
microwave annealing
dual implantation
Online Access:http://www.mdpi.com/1996-1944/11/4/471

Internet

http://www.mdpi.com/1996-1944/11/4/471

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