Interface-dependent rectifying TbMnO3-based heterojunctions
We report the fabrication and characterizations of oxide heterojunctions composed of TbMnO3 thin films grown on conducting Nb:SrTiO3 substrates. The heterojunctions exhibit rich rectifying characteristics, depending on not only the measurement temperature but also the growth temperature: at 300 K, g...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2011-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3660322 |