Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

We have investigated transient I<sub>d</sub> - V<sub>g</sub> and I<sub>d</sub> - V<sub>d</sub> characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics. We show...

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Bibliographic Details
Main Authors: Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Ferroelectric
FET
negative capacitance
Online Access:https://ieeexplore.ieee.org/document/9060962/

Internet

https://ieeexplore.ieee.org/document/9060962/

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