Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors

It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon d...

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Bibliographic Details
Main Author: M. A. Amato
Format: Article
Language:Portuguese
Published: Sociedade Brasileira de Física
Series:Revista Brasileira de Ensino de Física
Online Access:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1806-11172002000400003&lng=en&tlng=en