Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two kinds of laser structures, the lattice-matched quantum well double heterostructure (DH) and the grade-...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
1997-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1997/92719 |