Instability in In<sub>0.7</sub>Ga<sub>0.3</sub>As Quantum-Well MOSFETs with Single-Layer Al<sub>2</sub>O<sub>3</sub> and Bi-Layer Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress

Instability in In<sub>0.7</sub>Ga<sub>0.3</sub>As Quantum-Well MOSFETs with Single-Layer Al<sub>2</sub>O<sub>3</sub> and Bi-Layer Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress

The instability of transistor characteristics caused by charge trapping under positive bias temperature (PBT) stress in In<sub>0.7</sub>Ga<sub>0.3</sub>As metal oxide semiconductor field-effect transistors (MOSFETs) with single-layer Al<sub>2</sub>O<sub>3<...

Full description

Bibliographic Details
Main Authors: Hyuk-Min Kwon, Dae-Hyun Kim, Tae-Woo Kim
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Electronics
Subjects:
InGaAs MOSFET
atomic layer deposition (ALD)
interfacial trap density (D<sub>it</sub>)
charge trapping
instability of electrical characteristics
transconductance (Gm) degradation
Online Access:https://www.mdpi.com/2079-9292/9/12/2039

Internet

https://www.mdpi.com/2079-9292/9/12/2039

Similar Items