Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications
The current-voltage (ID-VD) characteristics of W/4H-SiC Schottky barrier diodes (SBDs) are investigated in the 303–448 K temperature range by means of a numerical simulation study. Results showed a good agreement with measurements for a bias current ranging from 100 nA up to 10 mA. The main device p...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
KeAi Communications Co., Ltd.
2020-01-01
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| Series: | Solid State Electronics Letters |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589208820300168 |