New Designed Procedure for G/SiO<sub>2</sub>/SiC Nano-Heterojunctions Growth on Recycled 3C-SiC Powder
Few layer graphene/SiO2/SiC (G/SiO2/SiC) core-layers-sheath nano-heterojunctions were obtained by a new easy and cheap designed procedure by thermal annealing at atmospheric pressure and low temperature on 3C-SiC powder derived from exhausted activated carbon. Recycled SiC was chosen as growth subst...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
AIDIC Servizi S.r.l.
2017-03-01
|
Series: | Chemical Engineering Transactions |
Online Access: | https://www.cetjournal.it/index.php/cet/article/view/2318 |