New Designed Procedure for G/SiO<sub>2</sub>/SiC Nano-Heterojunctions Growth on Recycled 3C-SiC Powder
Few layer graphene/SiO2/SiC (G/SiO2/SiC) core-layers-sheath nano-heterojunctions were obtained by a new easy and cheap designed procedure by thermal annealing at atmospheric pressure and low temperature on 3C-SiC powder derived from exhausted activated carbon. Recycled SiC was chosen as growth subst...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIDIC Servizi S.r.l.
2017-03-01
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| Series: | Chemical Engineering Transactions |
| Online Access: | https://www.cetjournal.it/index.php/cet/article/view/2318 |