Improved Uniformity and Endurance Through Suppression of Filament Overgrowth in Electrochemical Metallization Memory With AgInSbTe Buffer Layer

Improved Uniformity and Endurance Through Suppression of Filament Overgrowth in Electrochemical Metallization Memory With AgInSbTe Buffer Layer

We demonstrated an effective approach to suppress conductive filament (CF) overgrowth through the introduction of a AgInSbTe (AIST) buffer layer into amorphous carbon-based electrochemical metallization memory devices. The overshoot current (I<sub>OS</sub>) was monitored in real-time for...

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Bibliographic Details
Main Authors: Ye Tao, Xuhong Li, Haiyang Xu, Zhongqiang Wang, Wentao Ding, Weizhen Liu, Jiangang Ma, Yichun Liu
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
ECM device
amorphous carbon
AgInSbTe buffer layer
overshoot current suppression
Online Access:https://ieeexplore.ieee.org/document/8372911/

Internet

https://ieeexplore.ieee.org/document/8372911/

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