Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature

Abstract III‐nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field‐effect transistor (FET). In this work, the dependence of the spin relaxation time on ex...

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Bibliographic Details
Main Authors: Xingchen Liu, Ning Tang, Shixiong Zhang, Xiaoyue Zhang, Hongming Guan, Yunfan Zhang, Xuan Qian, Yang Ji, Weikun Ge, Bo Shen
Format: Article
Language:English
Published: Wiley 2020-07-01
Series:Advanced Science
Subjects:
III‐nitride semiconductors
spin dynamics
spin–orbit coupling
time‐resolved Kerr rotation
Online Access:https://doi.org/10.1002/advs.201903400

Internet

https://doi.org/10.1002/advs.201903400

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