Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature
Abstract III‐nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field‐effect transistor (FET). In this work, the dependence of the spin relaxation time on ex...
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Online Access: | https://doi.org/10.1002/advs.201903400 |
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doaj-4d26c069cb68481a8c811fec43a084472020-11-25T03:45:20ZengWileyAdvanced Science2198-38442020-07-01713n/an/a10.1002/advs.201903400Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room TemperatureXingchen Liu0Ning Tang1Shixiong Zhang2Xiaoyue Zhang3Hongming Guan4Yunfan Zhang5Xuan Qian6Yang Ji7Weikun Ge8Bo Shen9State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 ChinaState Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaAbstract III‐nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field‐effect transistor (FET). In this work, the dependence of the spin relaxation time on external strain‐induced polarization electric field is investigated in InGaN/GaN multiple quantum wells (MQWs) by time‐resolved Kerr rotation spectroscopy. Owing to the almost canceled two different spin–orbit coupling (SOC), the spin relaxation time as long as 311 ps in the MQWs is obtained at room temperature, being much longer than that in bulk GaN. Furthermore, upon applying an external uniaxial strain, the spin relaxation time decreases sensitively, which originates from the breaking of the SU(2) symmetry. The extracted ratio of the SOC coefficients shows a linear dependence on the external strain, confirming the essential role of the polarization electric field. This effective manipulation of the spin relaxation time sheds light on GaN‐based nonballistic spin FET working at room temperature.https://doi.org/10.1002/advs.201903400III‐nitride semiconductorsspin dynamicsspin–orbit couplingtime‐resolved Kerr rotation |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Xingchen Liu Ning Tang Shixiong Zhang Xiaoyue Zhang Hongming Guan Yunfan Zhang Xuan Qian Yang Ji Weikun Ge Bo Shen |
spellingShingle |
Xingchen Liu Ning Tang Shixiong Zhang Xiaoyue Zhang Hongming Guan Yunfan Zhang Xuan Qian Yang Ji Weikun Ge Bo Shen Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature Advanced Science III‐nitride semiconductors spin dynamics spin–orbit coupling time‐resolved Kerr rotation |
author_facet |
Xingchen Liu Ning Tang Shixiong Zhang Xiaoyue Zhang Hongming Guan Yunfan Zhang Xuan Qian Yang Ji Weikun Ge Bo Shen |
author_sort |
Xingchen Liu |
title |
Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature |
title_short |
Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature |
title_full |
Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature |
title_fullStr |
Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature |
title_full_unstemmed |
Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature |
title_sort |
effective manipulation of spin dynamics by polarization electric field in ingan/gan quantum wells at room temperature |
publisher |
Wiley |
series |
Advanced Science |
issn |
2198-3844 |
publishDate |
2020-07-01 |
description |
Abstract III‐nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field‐effect transistor (FET). In this work, the dependence of the spin relaxation time on external strain‐induced polarization electric field is investigated in InGaN/GaN multiple quantum wells (MQWs) by time‐resolved Kerr rotation spectroscopy. Owing to the almost canceled two different spin–orbit coupling (SOC), the spin relaxation time as long as 311 ps in the MQWs is obtained at room temperature, being much longer than that in bulk GaN. Furthermore, upon applying an external uniaxial strain, the spin relaxation time decreases sensitively, which originates from the breaking of the SU(2) symmetry. The extracted ratio of the SOC coefficients shows a linear dependence on the external strain, confirming the essential role of the polarization electric field. This effective manipulation of the spin relaxation time sheds light on GaN‐based nonballistic spin FET working at room temperature. |
topic |
III‐nitride semiconductors spin dynamics spin–orbit coupling time‐resolved Kerr rotation |
url |
https://doi.org/10.1002/advs.201903400 |
work_keys_str_mv |
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1724510056750252032 |