Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature
Abstract III‐nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field‐effect transistor (FET). In this work, the dependence of the spin relaxation time on ex...
Main Authors: | Xingchen Liu, Ning Tang, Shixiong Zhang, Xiaoyue Zhang, Hongming Guan, Yunfan Zhang, Xuan Qian, Yang Ji, Weikun Ge, Bo Shen |
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Format: | Article |
Language: | English |
Published: |
Wiley
2020-07-01
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Series: | Advanced Science |
Subjects: | |
Online Access: | https://doi.org/10.1002/advs.201903400 |
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