31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom ju...

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Bibliographic Details
Main Authors: Campesato Roberta, Tukiainen Antti, Aho Arto, Gori Gabriele, Isoaho Riku, Greco Erminio, Guina Mircea
Format: Article
Language:English
Published: EDP Sciences 2017-01-01
Series:E3S Web of Conferences
Online Access:https://doi.org/10.1051/e3sconf/20171603003

Internet

https://doi.org/10.1051/e3sconf/20171603003

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