Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles
Abstract Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycles to end of life as a function of stress parameters. These models are normally developed based on experimental data from accelerated power‐cycling tests performed at predefined temperature st...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-05-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12083 |