Sn tuned microstructure and phase-change characteristics of GeTe nanowires
Sn-doped GeTe (SGT) nanowires (NWs) were investigated systematically for use in phase-change memory (PCM) applications. Composition and microstructure characterizations indicate that SGT with ∼3.0% Sn (SGT_3.0) NWs preserves the GeTe rhombohedral (R) structure, whereas SGT with a Sn content of ∼25.0...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0027144 |