Sn tuned microstructure and phase-change characteristics of GeTe nanowires

Sn tuned microstructure and phase-change characteristics of GeTe nanowires

Sn-doped GeTe (SGT) nanowires (NWs) were investigated systematically for use in phase-change memory (PCM) applications. Composition and microstructure characterizations indicate that SGT with ∼3.0% Sn (SGT_3.0) NWs preserves the GeTe rhombohedral (R) structure, whereas SGT with a Sn content of ∼25.0...

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Main Authors: Jie Zhang, Hailin Yu, Fenfen Wei, Yaojun Dong, Zhenguang Shao, Yushen Liu
Format: Article
Language:English
Published: AIP Publishing LLC 2020-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0027144
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spelling doaj-4ddcd571a72d4e30b5e7e617872a12ae2020-11-25T03:36:55ZengAIP Publishing LLCAIP Advances2158-32262020-10-011010105228105228-610.1063/5.0027144Sn tuned microstructure and phase-change characteristics of GeTe nanowiresJie Zhang0Hailin Yu1Fenfen Wei2Yaojun Dong3Zhenguang Shao4Yushen Liu5College of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, ChinaCollege of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, ChinaBasic Experimental Teaching Center, Shanxi Normal University, Xi’an 710062, ChinaCollege of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, ChinaCollege of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, ChinaCollege of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, ChinaSn-doped GeTe (SGT) nanowires (NWs) were investigated systematically for use in phase-change memory (PCM) applications. Composition and microstructure characterizations indicate that SGT with ∼3.0% Sn (SGT_3.0) NWs preserves the GeTe rhombohedral (R) structure, whereas SGT with a Sn content of ∼25.0% (SGT_25.0) NWs exhibits a cubic (C) structure. R–C structural conversion of SGT NWs is revealed with increasing Sn content. According to ab initio calculations, optimizing doping leads to a decrease in density of states near the Fermi level and reduces electrical conductivity, and thereby, SGT_3.0 is more applicable for PCM than SGT_25.0, which is attributed to Sn-induced structural change that brings about a diversity in the electrical properties. Experimentally, SGT_3.0 NWs have two significant threshold switchings and ideal high/low resistance ratio (∼105). Compared with undoped GeTe, SGT_3.0 NWs experience an increase in crystalline resistance, in agreement with our theoretical calculations, perfectly satisfying the requirement of low programming currents for PCM.http://dx.doi.org/10.1063/5.0027144
collection DOAJ
language English
format Article
sources DOAJ
author Jie Zhang
Hailin Yu
Fenfen Wei
Yaojun Dong
Zhenguang Shao
Yushen Liu
spellingShingle Jie Zhang
Hailin Yu
Fenfen Wei
Yaojun Dong
Zhenguang Shao
Yushen Liu
Sn tuned microstructure and phase-change characteristics of GeTe nanowires
AIP Advances
author_facet Jie Zhang
Hailin Yu
Fenfen Wei
Yaojun Dong
Zhenguang Shao
Yushen Liu
author_sort Jie Zhang
title Sn tuned microstructure and phase-change characteristics of GeTe nanowires
title_short Sn tuned microstructure and phase-change characteristics of GeTe nanowires
title_full Sn tuned microstructure and phase-change characteristics of GeTe nanowires
title_fullStr Sn tuned microstructure and phase-change characteristics of GeTe nanowires
title_full_unstemmed Sn tuned microstructure and phase-change characteristics of GeTe nanowires
title_sort sn tuned microstructure and phase-change characteristics of gete nanowires
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2020-10-01
description Sn-doped GeTe (SGT) nanowires (NWs) were investigated systematically for use in phase-change memory (PCM) applications. Composition and microstructure characterizations indicate that SGT with ∼3.0% Sn (SGT_3.0) NWs preserves the GeTe rhombohedral (R) structure, whereas SGT with a Sn content of ∼25.0% (SGT_25.0) NWs exhibits a cubic (C) structure. R–C structural conversion of SGT NWs is revealed with increasing Sn content. According to ab initio calculations, optimizing doping leads to a decrease in density of states near the Fermi level and reduces electrical conductivity, and thereby, SGT_3.0 is more applicable for PCM than SGT_25.0, which is attributed to Sn-induced structural change that brings about a diversity in the electrical properties. Experimentally, SGT_3.0 NWs have two significant threshold switchings and ideal high/low resistance ratio (∼105). Compared with undoped GeTe, SGT_3.0 NWs experience an increase in crystalline resistance, in agreement with our theoretical calculations, perfectly satisfying the requirement of low programming currents for PCM.
url http://dx.doi.org/10.1063/5.0027144
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AT fenfenwei sntunedmicrostructureandphasechangecharacteristicsofgetenanowires
AT yaojundong sntunedmicrostructureandphasechangecharacteristicsofgetenanowires
AT zhenguangshao sntunedmicrostructureandphasechangecharacteristicsofgetenanowires
AT yushenliu sntunedmicrostructureandphasechangecharacteristicsofgetenanowires
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