Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
Abstract A time-decay resistive switching memory using a 3D vertical Pt/Ta2O5−x/W device architecture is demonstrated, in which horizontal W electrodes were fabricated, and vertical Pt electrodes was formed at the sidewall after oxide was deposited. Unlike conventional resistive switching, which usu...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2017-04-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-00985-0 |