Circuit Level Modeling of Electrically Doped Adenine–Thymine Nanotube Based Field Effect Transistor

Circuit Level Modeling of Electrically Doped Adenine–Thymine Nanotube Based Field Effect Transistor

We investigate the gate-controlled, electrically doped tunnelling current in Adenine-Thymine heterojunction nanotube-based Field Effect Transistor (FET). This analytical model FET is designed by Density Functional Theory (DFT) and Non-Equilibrium Green's Function (NEGF) based First principle fo...

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Bibliographic Details
Main Authors: Debarati Dey, Debashis De, Ferial Ghaemi, Ali Ahmadian, Luqman Chuah Abdullah
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Adenine-thymine
DFT
nanotube
NEGF
TFET
Online Access:https://ieeexplore.ieee.org/document/8946542/

Internet

https://ieeexplore.ieee.org/document/8946542/

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