Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layers
The crystallization of ferroelectric (Hf,Zr)O2 thin films is achieved by playing on the deposition pressure during reactive magnetron sputtering from a Hf/Zr metallic target. Postdeposition annealing was tried at different temperatures in order to optimize the quality of the samples. Structural char...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-08-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5110894 |